An oxide semiconductor has a wide band gap and low off-state current. We focused on the off-state characteristics of a transistor including an oxide semiconductor and concentrated on measuring the off-state current. We fabricated a circuit TEG that had an In-Ga-Zn-Oxide TFT (IGZO-TFT) with a large channel width of 100,000 μm over a glass substrate and estimated the amount of electric charge flowing through the circuit TEG for a long time. As a result, we discovered that an IGZO-TFT had off-state current as small as 50yA/μm (at 85°C). We are the first to measure off-state current on the order of yA; "y" is the SI prefix representing 10~(-24).
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