Gas-sens characteristics research of Al/CuPc/Cu Schottky diode

摘要

In this paper, evidence is provided that an organic Al/CuPc/Cu shottky diode can be used as a novel gas sensor. This device is simple manufacturing process, lower costs, and shows good Schottky characteristics. Its structure includes three layers that are Al/CuPc/Cu. The sensitive feature of the device is characterized, through researching the change of electric properties in NO2 gas. The results of the study indicate that the current of device increased obviously along with the 10ppm NO2 gas is accessed to. The potential barrier height in air and NO2 gas is calculated and compared. The results the potential barrier height of CuPc/Al reduced by 60meV.