Chapter 73 Anti-ESD Improvement by the Bulk-FOX Structure in HV nLDMOS Devices

摘要

This work is focused on a 0.25 μm 60 V high-voltage nLDMOS devices which will be integrated with a FOX structure in the bulk region, and evaluate the impacts on its anti-ESD protection ability. It is found that as an FOX sturcture adding, and as the FOX area ratio is increased, I_(t2) value will be enhanced too. When the FOX area ratio is about 83.5 %, I_(t2) value has a maximum value ～6A. However, as the FOX area ratio is increased, the R_(on) value will be declined. From the experimental data, it is revealed that V_(t1) (V_h) value decreased more than 16.9 % (35.6 %), anti-ESD ability increased more than 170.2 %, and R_(on) decreased more than 81.2 % as compared with the Ref. DUT.