Cross Conduction Analysis for Enhancement-Mode 650-V GaN HFETs in a Phase-Leg Topology

摘要

Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross conduction loss due to their exceptionally fast switching transients. Enhancement-mode GaN heterojunction field-effect transistors (HFETs) in the 600-V class are now commercially available, with switching transients as fast as 200 kV/μs. A double pulse test setup was used to measure the switching loss of one such GaN HFET, with several gate drive circuits and resistances. The results were analyzed and compared to characterize the effects of cross conduction in the active and synchronous devices of a phase-leg topology with enhancement-mode GaN HFETs.