SEU Study of Wideband Heterostructure Diode for Particle Detection

摘要

Single event upset simulation performed for radiation study over the device by studying ionized current generation. In this paper, we are discussing the investigation of n-type SiC-Silicon heterojunction diode. SILVACO ATLAS TCAD is used for realizing its 2D, 3D structure, and performing different simulation-based studies. In this paper, we focused on the Single event upset (SEU) behavior of Silicon Carbide -Silicon heterojunction diode with different internal structures. All simulations performed over the range of -10V to +10V voltage range. 2D, 3D structure built with 10mm by 10mm (10mm) boundary also has gradual doping concentration throughout the device.