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Control of Texture Size on As-Cut Crystalline Silicon by Microparticle-Assisted Texturing (MPAT) Process

机译:通过微粒辅助纹理(MPAT)工艺控制纹理尺寸的纹理大小

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The texture size on as-cut crystalline silicon (c-Si) is drastically reduced from ~22 μm to <; 2.7 μm when mixing glass microparticles with conventional alkaline texturing solutions. The processing time and c-Si loss are considerably reduced from >15 to ~3 min and from >8 to 2 μm (for one side), respectively. Thus, this process is applicable to very thin c-Si. High-quality surface passivation with the effective minority carrier lifetimes >7 ms, corresponding to surface recombination velocity of 0.38 cm/s was possible. After anti-reflection coating, the reflectivity ~0.4% at 600nm, and <; 2% in wide wavelength 450-950nm was achieved on this new texture.
机译:切割晶体硅(C-Si)上的纹理尺寸从〜22μm速度降低到<;将玻璃微粒与常规碱性纹理溶液混合时2.7μm。处理时间和C-Si损耗分别从> 15至3分钟和从> 8至2μm(一侧)的显着降低。因此,该过程适用于非常薄的C-Si。具有有效少数载体寿命> 7ms的高质量表面钝化,对应于0.38cm / s的表面重组速度。在抗反射涂层后,反射率为600nm的反射率〜0.4%,<;在这种新纹理上实现了宽波长450-950nm的2%。

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