Textured crystalline silicon layer production using laser, includes control of energy intensity to achieve textured crystallites of specific diameter

摘要

Laser light energy influx per unit area is controlled. At each point of the overlap (delta d) and of the central region (D), it falls within a processing window. The energy level is below the agglomeration- and/or the spalling threshold of the layer, given that it also causes epitaxial crystal growth, in which textured crystallite with a 100-surface normal and crystallite diameter exceeding 20 Microm is achieved. Energy influx per cm2 falls in the upper half of a region between onset of crystallization and the agglomeration or the ablation threshold.