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Control of Texture Size on As-Cut Crystalline Silicon by Microparticle-Assisted Texturing (MPAT) Process

机译:通过微粒辅助纹理化(MPAT)工艺控制原样结晶硅上的纹理尺寸

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The texture size on as-cut crystalline silicon (c-Si) is drastically reduced from ~22 μm to <; 2.7 μm when mixing glass microparticles with conventional alkaline texturing solutions. The processing time and c-Si loss are considerably reduced from >15 to ~3 min and from >8 to 2 μm (for one side), respectively. Thus, this process is applicable to very thin c-Si. High-quality surface passivation with the effective minority carrier lifetimes >7 ms, corresponding to surface recombination velocity of 0.38 cm/s was possible. After anti-reflection coating, the reflectivity ~0.4% at 600nm, and <; 2% in wide wavelength 450-950nm was achieved on this new texture.
机译:切割后的晶体硅(c-Si)上的织构尺寸从〜22μm大大减小到<;当将玻璃微粒与常规碱性变形溶液混合时为2.7μm。处理时间和c-Si损失分别从> 15分钟减少到〜3 min,从> 8μm减少到2μm(对于一侧)。因此,该工艺适用于非常薄的c-Si。有效少数载流子寿命> 7 ms的高质量表面钝化(对应于0.38 cm / s的表面复合速度)是可能的。防反射涂层后,在600nm处的反射率约为0.4%,并且<;在这种新纹理上,在450-950nm的宽波长下达到了2%。

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