Feasibility Study of Homojunction CIGS Solar Cells

摘要

The potential for high conversion efficiency of the homojunction Cu(In,Ga)Se_2 (CIGS) solar cells was examined by device simulations and experimental approaches. The simulation results showed that many electrons in n-CIGS layers could compensate to some extent for the existence of interface states at i-ZnO/n-CIGS interfaces in the homojunction structure. In the case of using the partial electrolyte treatments of CIGS films to produce the n-type doping, the concentrations of the Cd dopants in the n-CIGS layer were 10~(16) cm-~2. The conversion efficiency of 17.2% for this homojunction CIGS solar cell was obtained.