Effect of Indium Bromide Treatments Post-Deposition Recrystallization Temperature on Cu(In,Ga)Se2 Thin Films

摘要

Cu(In,Ga)Se2 samples were deposited onto molybdenum back contact at low temperature using thermal evaporation. Recrystallization was then performed at 400 °C using indium bromide vapor treatment for one hour. The treatment developed change in morphology with improved grain size and increased crystallinity. Variation in composition profile was observed, enhancing the In content while decreasing the Ga content. No apparent phase separation was observed from XRD but preferential orientation along (204) were induced.