Impact of Post-Deposition Recrystallization by Alkali Fluorides on Cu(In,Ga)Se_2Thin-Film Materials and Solar Cells

摘要

Using thermal evaporation, Cu(In,Ga)Se-2 (CIGS) layers were deposited at low temperature (350 degrees C) and high rate (10 mu m/h) using a single stage process. They were then recrystallized using a variety of alkali fluorides: NaF, KF, RbF and CsF. To ensure that the substrate would not influence the study (via alkali diffusion), the samples were deposited on silicon wafers. The chemical, physical and electrical properties of the films were then characterized, demonstrating that all alkali fluorides behave as fluxing agents to enhance recrystallization and conductivity, and induce a (112) preferential orientation. Secondary ion mass spectrometry analysis showed that no modification of the elements' distribution occurs because of recrystallization. Solar cells were also fabricated and characterized, indicating that NaF can double the efficiency of solar cells compared to the as-deposited layers. This enhancement is accompanied by the disappearance of a rollover, voltage dependent current collection and shunt from the current density-voltage curves. However, even for the best recrystallization, the current is still limited to 28 mA/cm(2), indicating that only a portion (0.75 mu m) of the full device (2 mu m) is activated.