Setting up a Device Model for Rb-Conditioned Chalcopyrite Solar Cells

摘要

A comprehensive device model based on SCAPS-1D simulations is presented that reproduces the experimentally determined current-voltage and capacitance-voltage characteristics of a Rb-free reference, a sample that underwent an RbF-treatment, and a sample based on a CIGSe/RbInSe2-stack. According to this model, and in agreement with experimental findings, the main consequences of both Rb-conditionings are an increased doping-density and a defect passivation in the CIGSe as well as the formation of a photocurrent-barrier at the hetero-interface. With the numerical model established, fundamental aspects of the Rb-conditioning, as e.g. the differentiation between its effect on bulk and interface recombination are discussed.