Temporary wafer bonding defect impact assessment on substrate thinning: Process enhancement through systematic defect track down

摘要

Among the technological developments pushed by the emergence of 3D-ICs, wafer thinning has become a key element in device processing over the past years. As volume increases, defects in the overall thinning process flow will become a major element of focus in the future. Indeed product wafers arriving at this point of process are of maximum value. Fundamental understanding of the potential defects and their impact on devices is therefore needed to minimize their recurrence.