In this paper, a wafer-level System-in-Packaging structure using through silicon via (TSV) forintegration on both sides of the silicon wafer is presented. It is composed of BCB/ metal multilayers,high-resistivity silicon substrate with TSV. To reduce the transmission loss in microwave frequency, notonly the high-resistivity silicon is used, but also a special TSV structure with 6 grounded shielding viasaround the core via are adopted. Microstrip line (MSL) is used to transmit high-frequency signal onpackage plane together with the low permittivity intermediate dielectric polymer, BCB. Descriptions onthe interconnection structure and the fabrication process are included. The microwave measurementresult of the MSL connected by TSVs is measured up to 35GHz. The results of both the simulation andthe measurement are presented.
展开▼
