DEMONSTRATION OF ENHANCED PERFORMANCE IN SI SOLAR CELL WITH LARGE SCALE QUASIORDERED NANOHOLE TEXTURE

摘要

Large scale silicon nanohole textured solar cell with radial p-n junctions was demonstrated via a lowcost, maskless method with laser annealed silver particle catalytic wet etching and phosphoric acid diffusion. Under 1sun AM1.5G illumination, a Si nanohole solar cell exhibited an open-circuit voltage of 558 mV, a short-circuitcurrent density of 29.1 mA/cm~2, and a remarkable power conversion efficiency of 9.5%. The quasi-random nanoholegeometry demonstrates a low cost and viable method for enhanced light absorption and performance of solar energyconversion. The nanohole texturing has been studied as a good anti-reflection technique for thin film solar cell. Thedevice fabrication techniques used are transferrable to thin film photovoltaic applications.