An area-efficient hybrid high-voltage charge pump design for IoT applications

摘要

A new hybrid charge pump topology is proposed to achieve high voltage DC supply in a TSMC 0.13 μm BCD technology. The design incorporates a hybrid cross-coupled and serial-parallel topologies which permits the use of MEM capacitors through-out the design and, thus, minimizes the overall area required for the same voltage gain. The paper proposes a new zero-reversion loss cross-coupled charge pump and a new serial-parallel charge pump design to reduce the overall area required for the charge pump by up to 50 % and provides a strong basis for different gain charge pump implementations.