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Amorphous In-Ga-Zn-O Thin Film Transistors on Ultra-High-Tg Polycarbonate Films

机译：超高Tg聚碳酸酯薄膜上的非晶In-Ga-Zn-O薄膜晶体管

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An ultra-high-Tg (264 °C) polycarbonate (UHT-PC) film is developed for use in high temperature processes for fabricating plastic electronic devices. This UHT-PC film can be used as a substrate in electronic devices that are annealed at temperatures over 200 °C. Amorphous ln-Ga-Zn-O TFTs on the UHT-PC films are demonstrated.

机译：开发了一种超高Tg（264°C）聚碳酸酯（UHT-PC）膜，用于制造塑料电子设备的高温工艺。此UHT-PC膜可用作在200℃以上温度退火的电子设备中的基材。演示了UHT-PC薄膜上的非晶ln-Ga-Zn-O TFT。

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来源
《International display workshops》|2012年|1792-1793|共2页
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Tsuyoto Negishi; Yoshinori Ikeda; Takahiro Daidou; Takashi Shiro; Koki Ikeda;
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Amorphous In-Ga-Zn-O; a-IGZO; TFT; Plastic substrate; Flexible electronics; High Tg polycarbonate;

机译：非晶In-Ga-Zn-O; IGZO; TFT;塑料基材;柔性电子;高Tg聚碳酸酯;

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专利

1. Fabrication and characterization of ferroelectric-gate thin-film transistors with an amorphous oxide semiconductor, amorphous In-Ga-Zn-O [J] . Ken-ichi Haga, Eisuke Tokumitsu Japanese journal of applied physics . 2014,第11期

机译：具有非晶氧化物半导体，非晶In-Ga-Zn-O的铁电栅薄膜晶体管的制造与表征
2. Highly sensitive ion-sensitive field-effect transistor sensor using fully transparent amorphous In-Ga-Zn-O thin-film transistors [J] . Ahn Min-Ju, Lim Cheol-Min, Cho Won-Ju Semiconductor science and technology . 2017,第3期

机译：使用完全透明的非晶In-Ga-Zn-O薄膜晶体管的高灵敏度离子敏感场效应晶体管传感器
3. Oxygen Dispersive Diffusion Induced Bias Stress Instability in Thin Active Layer Amorphous In-Ga-Zn-O Thin-Film Transistors [J] . Jaewook Jeong, Gwang Jun Lee, Joonwoo Kim, _Applied Physics Express . 2013,第3期

机译：氧扩散扩散引起薄有源层非晶In-Ga-Zn-O薄膜晶体管中的偏置应力不稳定性
4. Amorphous In-Ga-Zn-O Thin Film Transistors on Ultra-High-Tg Polycarbonate Films [C] . Tsuyoto Negishi, Yoshinori Ikeda, Takahiro Daidou, International display workshops . 2012

机译：超高Tg聚碳酸酯薄膜上的非晶In-Zn-O薄膜晶体管
5. Characterizing and Modeling Transient Photoconductivity in Amorphous In-Ga-Zn-O Thin Films. [D] . Luo, Jiajun. 2016

机译：表征和建模非晶In-Ga-Zn-O薄膜中的瞬态光电导。
6. Mobility Enhancement in Amorphous In-Ga-Zn-O Thin-Film Transistor by Induced Metallic in Nanoparticles and Cu Electrodes [O] . Shiben Hu, Honglong Ning, Kuankuan Lu, 2018

机译：纳米粒子和铜电极中诱导金属增强非晶In-Ga-Zn-O薄膜晶体管的迁移率
7. Low temperature activation of amorphous In-Ga-Zn-O semiconductors using microwave and e-beam radiation, and the associated thin film transistor properties [O] . Seong Cheol Jang, Jozeph Park, Hyoung-Do Kim, 2019

机译：使用微波和电子束辐射的非晶In-Zn-O半导体的低温激活，以及相关的薄膜晶体管性能

Amorphous In-Ga-Zn-O Thin Film Transistors on Ultra-High-Tg Polycarbonate Films

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