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Coating Method of ZnS Layer for InP Quantum Dot by Solvothermal Method

机译：溶剂热法InP量子点ZnS层的涂覆方法

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A ZnS layer was coated around InP quantum dot (QD) by a solvothermal process. The photoluminescence (PL) quantum yield was improved by optimizing the annealing temperature, and the highest value was 42.2%. In addition, emission peak was changed from 532 nm to 629 nm by a size-sorting process.

机译：通过溶剂热工艺在InP量子点（QD）周围涂覆ZnS层。通过优化退火温度可以提高光致发光（PL）量子产率，最高值为42.2％。另外，发射峰通过尺寸分选过程从532nm改变为629nm。

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《International display workshops》|2012年|792-795|共4页
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作者
Shinnosuke Akiyama; Nayuta Funaki; Tomokazu Kurabayashi; Takeshi Fukuda; Norihiko Kamata; Yoshihiro Ishimaru;
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关键词
solvothermal method; InP/ZnS quantum dot; coating process; PL quantum yield;

机译：溶剂热法InP / ZnS量子点;涂层工艺; PL量子产率;

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专利

1. Utilization of Solvothermally Grown InP/ZnS Quantum Dots as Wavelength Converters for Fabrication of White Light-Emitting Diodes [J] . Eun-Pyo Jang, Heesun Yang Journal of nanoscience and nanotechnology . 2013,第9期

机译：溶剂热生长的InP / ZnS量子点作为波长转换器用于制造白光发光二极管
2. Facile consecutive solvothermal growth of highly fluorescent InP/ZnS core/shell quantum dots using a safer phosphorus source [J] . Byun H.-J., Song W.-S., Yang H. Nanotechnology . 2011,第23期

机译：使用安全的磷源轻松连续地进行高荧光InP / ZnS核/壳量子点的溶剂热生长
3. A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes [J] . Cao Fan, Wang Sheng, Wang Feijiu, Chemistry of Materials: A Publication of the American Chemistry Society . 2018,第21期

机译：用于大型InP / ZnSE / ZnS核心壳量子点的逐层生长策略，从而实现高效率发光二极管
4. Coating Method of ZnS Layer for InP Quantum Dot by Solvothermal Method [C] . Shinnosuke Akiyama, Nayuta Funaki, Tomokazu Kurabayashi, International display workshops . 2012

机译：溶剂液法的ZnS层涂覆方法
5. Novel layered semiconductor quantum structures in new material systems --- III-nitride quantum cascade emitters and detectors, light emission in Fe:ZnSe with quantum cascade laser pumping, theoretical methods with real-time Green's functions, and hyperbolic metamaterials. [D] . Song, Yu. 2014

机译：新材料系统中的新型分层半导体量子结构---氮化物量子级联发射器和检测器，具有量子级联激光泵浦的Fe：ZnSe发光，具有实时格林函数的理论方法以及双曲线超材料。
6. Dual-Emissive and Color-Tunable Mn-Doped InP/ZnS Quantum Dots via a Growth-Doping Method [O] . Guilin Zhang, Shiliang Mei, Xian Wei, 2018

机译：通过生长掺杂法实现双发射和色可调的Mn掺杂InP / ZnS量子点
7. Good Charge Balanced Inverted Red InP/ZnSe/ZnS-Quantum Dot Light-Emitting Diode with New High Mobility and Deep HOMO Level Hole Transport Layer [O] . -1

机译：良好的充电平衡倒置红色InP / ZnSE / ZnS-量子点光发射二极管，具有新的高迁移率和深同性阀孔输送层

Coating Method of ZnS Layer for InP Quantum Dot by Solvothermal Method

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