High-Performance and Low-Temperature-Compatible Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Thermal Oxide Buffered Aluminum Oxide as Gate Dielectric

摘要

High-performance and low-temperature-compatible solid phase crystallized polycrystalline silicon thin film transistors using thermal oxide buffered aluminum oxide (Al_2O_3) as gate dielectric are demonstrated. By growing a thermal oxide buffer layer using two-step annealing method, the interface quality is greatly improved, resulting in excellent device performance.