High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

摘要

Polycrystalline silicon thin-film transistors (TFTs) integrating sputtered Al_2O_3 gate dielectric with bridged-grain active channel are demonstrated. The proposed TFTs exhibit excellent device performance in terms of smaller threshold voltage, steeper subthreshold swing and higher on-current/off-current ratio. More importantly, the mobility of the proposed TFT is 5.5 times that of conventional TFTs with SiO_2 gate dielectric. All of these results suggest that the proposed TFT is a good choice for low-power and high-speed driving circuits in display application.