Device Performance of Benzothienobenzothiophene-Based Top-Gate Organic Field-Effect Transistors with Embedded Electrodes

摘要

We have fabricated 2,7-dioctyl[1]benzothieno [3,2-b][1]benzothiophene (C_8-BTBT)-based top-gate organic FETs with embedded source-drain electrodes and investigated the effect of the planarization of C_8-BTBT layers. Top-gate C_8-BTBT FETs with embedded electrodes show better electrical performance and smaller device-to-device variation in characteristics as compared to top-gate FETs with a conventional electrode configuration.