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Development of large die assembly process based on simulation and experiments of underfill materials selection

机译:基于填充材料选择的仿真和实验的大型模拟过程的开发

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Flip-chip ball grid array (FCBGA) packaging was developed to meet the requirements of high I/O density and high electrical performance and the trend of persistent miniaturization of electronic products. Underfill is usually used in flip-chip packaging to fill the gap between the silicon die and the substrate to provide solder bumps protection, compensation of the coefficient of thermal expansion (CTE) mismatch between the silicon die, the solder bumps, and the organic substrate, and prevent fracture failures such as crack of the solder bumps during thermal cycling. The thermal-mechanical properties of underfill, such as CTE, Tg (glass transition temperature) and Young's modulus, impact greatly on the reliability of flip-chip packages. This paper presents a study of underfill selection and assembly of large Cu/low-k die (19.2 mm×15.8 mm) with 160 µm bump pitch. Thermal stress simulation was carried out to select suitable underfill material for the Cu/low-k flip chip package. Thermal cycling (TC) test was performed over a range from 125 to −55°C for 1000 cycles to verify the reliability of the package using different underfill materials.
机译:开发了倒装芯片球栅阵列(FCBGA)包装,以满足高I / O密度和高电工性能的要求以及电子产品持续小型化的趋势。底部填充通常用于倒装芯片封装,以填充硅模具和基板之间的间隙,以提供焊料凸块保护,补偿硅模具,焊料凸块和有机基材之间的热膨胀系数(CTE)失配,防止在热循环期间诸如焊料凸块的裂缝的断裂失误。底部填充的热电机械性能,如CTE,Tg(玻璃化转变温度)和杨氏模量,对倒装芯片封装的可靠性产生了极大的影响。本文介绍了底部填充选择和大型Cu / Low-K模具的组装(19.2 mm× 15.8 mm),160µ m凹凸间距。进行热应力模拟以选择Cu / Low-K倒装芯片封装的合适底部填充材料。在125至x2212; 55° c的范围内进行热循环(tc)测试,以验证使用不同的底部填充材料的包装的可靠性。

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