X- and Ku-band internally matched GaN amplifiers with more than 100W output power

摘要

In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.