220 GHz Detection Using 0.35 #x0B5;m AMS MOSFET as Sub-THz Detector: Drain Bias Detraction

摘要

In this paper we present the detection of sub-THzradiation at 220 GHz by using 0.35 µm AMS Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The design procedure and experimental setup are shown in order to design and characterize the MOSFETs photo response. The experiment and observation of photo response are measured against gate voltage with a drain current bias detraction at room temperature. The measured photo response is a superposition of a generally increasing response with a decrease in VGS coupled with a small peak approximately at threshold and there is evidence that the MOSFET can be a sensitive sub-THz detector in the room temperature.