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MOSFET and memory cell having improved drain current through back bias application

机译：MOSFET和存储器电池通过后偏置应用具有改进的漏极电流

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摘要

A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

机译：已经描述了半导体金属氧化物 - 半导体场效应晶体管（MOSFET）晶体管，其通过MOSFET的固有双极结晶体管（BJT）获得的导通状态电流增加。提供了操作MOS晶体管的方法。

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公开/公告号US11201215B2

专利类型
公开/公告日2021-12-14

原文格式PDF
申请/专利权人 ZENO SEMICONDUCTOR INC.;
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申请/专利号US201916714443
发明设计人 JIN-WOO HAN;YUNIARTO WIDJAJA;ZVI OR-BACH;DINESH MAHESHWARI;
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申请日2019-12-13
分类号H01L21/82;H01L27/02;H01L29/66;H01L29/78;H01L29/10;G11C11/404;G11C16/04;G11C16/10;G11C16/26;H01L21/761;H01L21/8238;H01L27/092;H01L27/12;H01L27/24;H01L29/08;H01L29/423;H01L29/786;G11C13;H01L21/265;H01L29/06;H01L29/32;H01L29/788;H01L29/792;H03K19/0948;H03K19/20;H03K19/21;
国家 US
入库时间 2022-08-24 22:47:39

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