Smooth GaAs (110) surface fabrication using the Ga-assisted deoxidation method

摘要

We have practiced the Ga-assisted deoxidation method on GaAs(l 10) surface.When the deposit amount of Ga is suitable, flat GaAs(110) surface without any thermal deoxidation induced pits and excrescent GaAs islands obtained with the Ga-assisted deoxidation method.The obtained results suggested that, 9ML Ga was optimized dose for GaAs(110) surface, which is a little more than GaAs(001) surface indicating a thicker oxide layer of GaAs(l 10) surface.