Hydrogenation of Si(110) surface due to hydrogen plasma exposure, investigated with in-situ MIR-IRAS

摘要

Hydrogenation of Si(110) surface due to hydrogen plasma was investigated, using in-situ infrared spectroscopy in multiple internal reflection geometry (in-situ MIR-IRAS). The amorhpous layer was formed. Especially, the SiH2 components were finally formed in the amorphous layer. The formation of the SiH2 is performed with 0.5-order reaction, in a comparion with the hydrogen exposure time. It is suggested that two hydrogen atoms are required to form SiH2.