376 nm ultra-violet laser diode annealing of Si thin-films

摘要

376 nm ultra-violet laser diode was used for crystallization of Si thin-film on glass substrate for thin-film solar cell application. Laser beam was focused on Si film with a dimension of 1.5 × 8µm and it is scanned over Si film with velocities of among 0.3 m/s to 5.2 m/s. From scanning electron microscopy (SEM) and Raman scattering spectroscopy (Raman), it is found that lateral crystallization was induced in Si films, with its crystallinity comparable to that of excimer laser crystallized Si film.