Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy

摘要

We investigate molecular adsorption doping by electron withdrawing NO_2 and electron donating NH_3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements show conductance changes upon introduction of molecular adsorbents on epitaxial graphene. Conductance changes are a trade-off between carrier concentration and scattering, and manifest at direct current and optical frequencies. We therefore investigate changes in the infrared (IR) reflection spectra to correlate these two frequency domains, as reflectance changes are due to a change of epitaxial graphene (EG) surface conductance. We match theory with experimental IR data and extract changes in carrier concentration and scattering due to gas adsorption. Finally, we separate the intraband and interband scattering contributions to the electronic transport under gas adsorption. The results indicate that, under gas adsorption, the influence of interband scattering cannot be neglected, even at DC.