Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO_2 structures

摘要

The defects at the interface and in the oxide have been considered as the sources of mobility degradation at the SiC/SiO_2 interface as in the case of the Si/SiO_2 system. By examining available experimental and theoretical results and performing new calculation, we show that thermal oxidation creates immobile carbon di-interstitial defects inside the semiconductor epilayer, which are a major cause of the poor mobility in SiC/SiO_2 structures.