In order to investigate the interlayer effect for the source and drain metal in inkjet processed zinc tin oxide (ZTO) thin-film transistor, MoO_3 was introduced between active layer and aluminum electrodes. The improved electrical properties were obtained as follows; mobility of 3.75 cm~2/V s, lon/loff current ratio of 10~6, threshold voltage of 6.8 V, subthreshold slope of 0.8 VIdec. The hysteresis behavior and bias stability with interlayer was also investigated and compared with the spin-coated ZTO TFT.
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机译：为了研究喷墨加工的锌氧化锌（ZTO）薄膜晶体管中的源极和漏极金属的层间效应，在有源层和铝电极之间引入MOO_3。提高的电性能如下取得;迁移率为3.75cm〜2 / v s，lon / leow电流比为10〜6，阈值电压为6.8 v，亚videc的亚阈值斜率。还研究了与中间层的滞后行为和偏置稳定性，并与旋涂的ZTO TFT进行比较。
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