Study of Filament Geometry for Large Area nc-Si TFTs Fabricated at Low Temperature(≤ 100 °C) by Cat-CVD on Flexible Substrates

摘要

We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100 °C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.