Effect of Oxygen Partial Pressure on the Performance of a-IGZO TFTs with a Self-Aligned Top-Gate Coplanar Structure

摘要

Effect of oxygen partial-pressure (P_o) is investigated in amorphous-InGaZnO thin-film transistors. In addition to improved stability, the threshold-voltage shifts from -0.3 to 0.8 V, while mobility decreases from 20 to 8 cm~2/V·s as the P_o increases from 2 to 16 sccm. P_o can therefore be used to control the threshold-voltage.