Preparation of Patterned BiFeO_3 Thin Films on the Functional Silicon Substrates Surface

摘要

Patterned octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) were fabricated on silicon substrates, utilizing short wave UV irradiation meter (λ = 184.9 nm) as the photolithograph apparatus under the cover of the photomask. The patterned BiFeO_3 were prepared on the functional OTS-SAMs by sol-gel method. The characterization of the samples patterns was carried out by various techniques, including X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, atomic force microscopy and energy disperse spectroscopy. The results indicate that the pattern BiFeO_3 thin films were successfully prepared on the functional OTS-SAMs by sol-gel method and the thin films were BiFeO_3 thin films with hexagonal perovskite distorted structure which has clear boundaries and 200 urn deposited lines width.