Transport properties of free carriers in high quality n-type GaN wafers studied by THz time-domain magneto-optical ellipsometry

摘要

We have measured the dependence of effective mass and electron mobility of high quality n-type (0001) GaN wafers on carrier density in the range of 8×10¹⁵ ∼ 8×10¹⁷ cm⁻³ by using THz time-domain magneto-optical ellipsometry. The carrier density dependence of mobility agrees well with the theoretical prediction for low dislocation density sample.