FEM analysis of GaN based surface acoustic wave resonators

摘要

For the integration of surface acoustic wave (SAW) devices with nanostructures, numerical simulations must be employed. This paper describes finite element (FEM) models for a basic periodic cell of two types of SAW devices on GaN/Si devoted for GHz applications. E-beam lithographical techniques have been used for IDT fingers of 200nm wide. On wafer measurements of S parameters have shown a good agreement with the simulation results regarding the operation frequency.