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Fabrication of an electrostatically actuated impingement cooling device

机译:静电冲击冷却装置的制造

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This paper reports on the fabrication and characterization of an electrostatically actuated liquid droplet,impingement cooling device. The continuous increase of IC power density and the widespread use of 3D integrationcall for advanced cooling techniques. These are necessary to keep the device temperature low and to improve thereliability. Here we propose a 3D cooling device in which droplets are electrostatically actuated through verticalchannels and impinge on an IC surface. The channels are formed by stacking thinned perforated silicon dice. Bymeans of DRIE, vias with diameters ranging from 100 μm to 300 μm are etched into a low resistivity 200 mmsilicon wafer. Further processing involves passivation with oxide, contact opening, bonding to a carrier wafer andgrinding. Finally, stacking of the dies is achieved by debonding individual dies from the carrier wafer and bondingthe first die to a silicon base. A second die is then aligned and bonded on top of the first one, and this operation isrepeated a third and fourth time so as to create a “tower of Hanoi” structure. The preliminary results on the electrowetting properties of this device are reported.
机译:本文报道了静电驱动液滴的制造和表征, 冲击冷却装置。 IC功率密度的不断提高和3D集成的广泛使用 需要先进的冷却技术。这些对于保持器件温度较低并改善器件的温度是必不可少的。 可靠性。在这里,我们提出了一种3D冷却装置,其中液滴通过垂直方向静电驱动 通道并撞击在IC表面上。通过堆叠变薄的穿孔硅管芯来形成通道。经过 使用DRIE的方法,将直径范围从100μm到300μm的通孔蚀刻到200 mm低电阻率 硅晶片。进一步的处理包括用氧化物钝化,接触开口,键合到载体晶片上以及 研磨。最后,通过将单个管芯从载体晶圆上剥离并粘合来实现管芯的堆叠 第一个芯片是硅芯片。然后将第二个管芯对齐并粘合在第一个管芯上,然后执行此操作 重复第三和第四次,以创建一个“河内之塔”的结构。关于电的初步结果 报告了该设备的润湿特性。

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