Mobile Device Passive Integration from Wafer Process

摘要

In this paper, we present some passive components made from silicon substrate technology(Integrated Passive Device process) and integration schemes using these components for RFapplications. RF decoupling capacitors from this process are characterized on ESR and ESLperformance. Functional blocks (filters, baluns, diplexers, matching, etc) made from the IPDprocess, have shown good electrical performance with small form-factor features. The thinprofiles from the IPDs make them very suitable to be used inside laminate and QFN packages.System-in-Packages or multiple-chip-modules using IPD approaches may have significant sizereduction. The low profiles and the small form-factors of the IPDs result in less cross-talkbetween the IPDs and their nearby components (chips, SMDs, and routing traces, etc), andtherefore it is easier to maintain signal integrity for packages.