Electrical and optical properties of dual ion-beam sputtered (DIBS) Ga-doped ZnO (GZO) film is analyzed. Usage of assist ion source in DIBS precisely controls excitation of plasmonic features in GZO film. The plasmonic features observed in GZO are due to the formation of metal and metal-oxide nanoclusters. Such plasmon generation is verified by electron energy loss spectra as obtained by ultraviolet photoelectron spectroscopy, spectroscopic ellipsometry, and field emission scanning-electron microscopy measurements. This is promising in terms of increasing the efficiency of ultrathin solar cells by increasing optical path length in the absorbing layer.
展开▼
