PECVD CARBON-RICH SILICON NITRIDE LAYERS FOR THE REDUCTION OF THE LIGHT-INDUCEDDEGRADATION EFFECTS

摘要

Recently Kang et al showed that the amplitude of the light-induced-degradation effects related to the activationunder the injection of free carriers of boron-oxygen related complexes could be reduced by replacing the standardhydrogenated silicon nitride (SiN-H) anti-reflection film by a carbon-rich SiN film deposited from polymer solid or liquidsource. In this study, we show that similar reduced-LID effects can be obtained by using standard PECVD equipments, justby adding CH_4 gas during the deposition step without altering the optical properties of the layer. The amounts of the differentspecies present within the film were evaluated, and the stability under outdoor conditions of the optical and electricalproperties of the dielectric was monitored.