PROGRESS IN MECHANICALLY SHUTTERED TIME-RESOLVED PHOTOLUMINESCENCE IMAGING OF SILICON WAFERS

摘要

Recently two approaches to extend the photoluminescence imaging (PLI) technique by evaluating thedynamic properties of the sample have been presented. Time-resolved photoluminescence measurements may providecalibration-free maps of the effective minority charge carrier lifetime in silicon wafers. Due to the transient measurementthey minimize errors due to lateral inhomogeneities in setup or sample, which would usually contribute linearly tosteady-state PLI measurements. In this work, we will focus on mechanically shuttered time-resolved photoluminescenceimaging (TR-PLI), as it provides a high measurement range down to 5 μs at low hardware costs.