首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >10.9-EFFICENT CIGS-BASED SOLAR CELLS PREPARED FROM ELECTRODEPOSITED CIGS/Cu/In PRECURSOR FILMS
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10.9-EFFICENT CIGS-BASED SOLAR CELLS PREPARED FROM ELECTRODEPOSITED CIGS/Cu/In PRECURSOR FILMS

机译:由电沉积CIGS / Cu / In前驱膜制备的基于CIGS的10.9%高效太阳能电池

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CIGS-based solar cells are fabricated directly from electrodeposited CIGS/Cu/In precursor films.Electrodeposited precursor films are fabricated by a three-stage electrodeposition process in which: (a) CIGS iselectrodeposited in the first stage, (b) Cu is electrodeposited in the second stage, and (c) an In layer is deposited in thefinal third stage. All films are electrodeposited from an aqueous-based solution at room temperature in a twoelectrodecell configuration, with platinum gauze as the counter electrode and a glass substrate as the workingelectrode. The substrate is DC-sputtered with about 1 μm of Mo. The electrodeposited films are selenized at hightemperature (~550oC) to obtain a 10.9%-efficient device.
机译:基于CIGS的太阳能电池直接由电沉积的CIGS / Cu / In前驱体薄膜制成。 电沉积的前体膜是通过三阶段电沉积工艺制造的,其中:(a)CIGS为 在第一阶段中电沉积,(b)在第二阶段中电沉积Cu,(c)在第一阶段中沉积In层 最后的第三阶段。在室温下在双电极中从水性溶液中电沉积所有薄膜 电池配置,铂网作为对电极,玻璃基板作为工作电极 电极。用约1μm的Mo直流溅射衬底。电沉积的膜在高温下被硒化。 温度(约550oC)可获得效率为10.9%的器件。

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