Optimal design of active region for high power 670 nm GalnP/AlGalnP laser diodes

摘要

A detailed simulation of high power 670nm GalnP/ AIGalnP oxide stripe laser diode was presented based on the combination of GalnP quantum well width with waveguide thickness. The simulation parameter of background loss was confirmed as 1500cm'1 by calibrating with the experimental results. As the well width was changed, the well composition should be changed to maintain the fixed wavelength in these devices, in the simulating results of the LDs with 100μm current injection region and 900μm cavity length, the threshold currents were found firstly decreasing and then increasing with decreasing of quantum well width and waveguide thickness, and a minimum threshold current of 200mA was achieved at a 5nm width GalnP quatum well. While the waveguide had less affection on the threshold current in the thickness ranging from 50nm to 110nm.