8.8 W CW power from broad-waveguide Al-free active-region (/spl lambda/=805 nm) diode lasers

摘要

Al-free active-region (/spl lambda/=805 nm) diode lasers with 1 /spl mu/m thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 /spl mu/m wide stripes. The transverse beam pattern is Gaussian-like with a 36/spl deg/ beamwidth and the series resistance is only 48 m/spl Omega/.