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Effect of Hf doping on the dielectric properties of barium zirconate titanate ceramics

机译:f掺杂对锆钛酸钡陶瓷介电性能的影响

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Pure and Hf-doped BaZr_0.2Ti_0.8O_3 (short for BZT) ceramics are prepared by a conventional solid state reaction method. The crystal structure and dielectric properties of Hf-doped BZT ceramics have been investigated. The results indicate that Hf4+ ions have entered the unit cell maintaining the perovskite structure of solid solution and the pure and Hf-doped BZT ceramics are cubic phase. Addition of hafnium leads to the fall of the phase transition temperature and can decrease the dielectric loss of BZT ceramics at room temperature. When Hf content is more than 0.5 wt.%, the diffuseness of the phase transition enhances with the increasing of Hf content and when Hf content is 3 wt.%, the diffuseness of Hf-doped BZT ceramics is more than that of the pure BZT ceramics.
机译:通过常规的固态反应方法制备纯的和掺杂Hf的BaZr_0.2Ti_0.8O_3(BZT的缩写)陶瓷。研究了掺H的BZT陶瓷的晶体结构和介电性能。结果表明,Hf4 +离子已进入晶胞,保持了固溶体的钙钛矿结构,纯净的和掺杂Hf的BZT陶瓷为立方相。 ha的添加导致相变温度的降低,并可以降低室温下BZT陶瓷的介电损耗。当Hf含量大于0.5wt。%时,相变的扩散度随Hf含量的增加而增强;当Hf含量为3wt。%时,掺Hf的BZT陶瓷的扩散性大于纯BZT的扩散性。陶瓷。

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