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Numerical Simulation Analysis of Temperature Field on Silicon Carbide Synthesis Furnace

机译:碳化硅合成炉温度场的数值模拟分析

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Based on heat percolation theory and thermal coefficient equation of various layer-compositors, the effective thermal conductivity of silicone carbide (SiC) synthetic material was obtained, and the effective heat capacity under the complicated thermal effect in the process of raising temperature figured out in the present investigation. Based on the experimental results and using the finite element numerical model of nonlinear dynamic heat transfer process, the temperature field in SiC synthesis furnace was simulated by open source finite element software-FECsoft. And the dynamic laws of temperature distribution and thermal gradient of the furnace, the relation between the furnace core's temperature and the energy consumption and output were obtained. Based on the above analysis, some measures to save energy and increasing output of the silicon carbide synthesis furnace were proposed in this paper.
机译:根据热渗流理论和各层复合材料的热系数方程,得到了碳化硅(SiC)合成材料的有效导热系数,并在升温过程中计算了复杂热效应下的有效热容。目前的调查。基于实验结果,并利用非线性动态传热过程的有限元数值模型,利用开源有限元软件FECsoft对SiC合成炉的温度场进行了模拟。得到了炉内温度分布和热梯度的动态规律,得出了炉芯温度与能耗和出力之间的关系。在以上分析的基础上,提出了一些节能,提高碳化硅合成炉产量的措施。

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