We present a study of Ti implanted Si layers with doses in the 1013–1016 cm−2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm−2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and electrical measurements, the insulator-metallic transition in these samples. We obtain clear differences in the sheet resistance and the Hall mobility between the Ti implanted samples with concentrations above and below the theoretical Mott limit, which determines the IB formation.
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机译：我们对Ti注入的硅层进行了研究，其剂量在10 13 –10 16 cm -2 范围内，随后被脉冲激光以0.8 J / cm -2 熔化（PLM）。最近，我们将在Ti注入的Si层和下面的衬底之间发现的整流电学行为与最高剂量的Ti注入的Si层中的中间带（IB）形成联系起来。我们通过飞行时间二次离子质谱法（ToF-SIMS）和电学测量来分析这些样品中的绝缘体-金属跃迁。我们在浓度高于和低于理论莫特极限的Ti注入样品之间获得了薄层电阻和霍尔迁移率的明显差异，这决定了IB的形成。
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