Process Development of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors for Large Size AMOLED Applications

摘要

In this paper, we will show how to approach a-IGZO TFTs AMOLED in Gen 6 Fab currently. We evaluated the TFTs structure from bottom gate coplanar to BCE type with Mo/AI/Ti as S/D electrode. Using photosensitive organic passivation layer and TiO_x coating to improved the device performance and stability.