Effect of AC and DC Gate Bias-Stress on the Performance of a-IGZO TFTson Plastic Substrate

摘要

The effect of AC and DC gate bias stress is investigated in a-IGZO TFTs on polyimide. For the same effective stress time, AC induces a smaller positive ΔV_(th), compared to DC Stress, indicating trapping as the main degradation mechanism. The time dependence of ΔVth thus follows the stretched exponential equation.