首页> 外文会议>AIChE annual meeting >A new thin film heterojunction structure and fabrication process: dual backcontact CdS/CdTe Photovoltaics
【24h】

A new thin film heterojunction structure and fabrication process: dual backcontact CdS/CdTe Photovoltaics

机译:新型薄膜异质结结构和制造工艺:双背接触式CdS / CdTe光伏

获取原文

摘要

Three-dimensionally structured solar cells seek to improve upon the efficiency and costof planar devices. For the CdS/CdTe system, published 3D geometries have not yet achievedthese goals, not surprising given the much longer history of research in planar devices. Wepropose a new geometry and process that could accelerate progress. Specifically we: (1)model the performance of devices with dual back contacts that move the CdS layer behind theCdTe and eliminate the front contact; (2) describe processing via inexpensive, scalableelectrodeposition on microscale patterned insulating substrates; and (3) present theperformance of some early devices. The processes and test bed geometries are amenable toan array of deposition techniques for fabrication and measurements of three dimensionallystructured absorbers, contact materials and photovoltaic devices.
机译:三维结构的太阳能电池寻求提高效率和成本 平面设备。对于CdS / CdTe系统,尚未实现已发布的3D几何形状 这些目标,考虑到平面设备研究的悠久历史,就不足为奇了。我们 提出可以加快进度的新几何形状和过程。具体来说,我们:(1) 使用双后触点将CdS层移到后面的设备的性能模型 碲化镉,消除正面接触; (2)通过廉价,可扩展的方式描述处理 在微型图案化绝缘基板上进行电沉积;和(3)提出 一些早期设备的性能。工艺和测试台的几何形状适合 一系列用于制造和测量三维尺寸的沉积技术 结构化吸收器,接触材料和光伏设备。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号